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| FDC6432SH April 2003 FDC6432SH General Description 12V P-Channel PowerTrench MOSFET, 30V PowerTrench SyncFET Features * SyncFET 2.4 A, 30V * P channel -2.5 A, -12V R RDS(ON) = 90 m @ VGS = 10 V RDS(ON) = 105 m @ VGS = 4.5 V RDS(ON) = 90 m @ VGS = -4.5 V RDS(ON) = 125 m @ VGS = -2.5 V RDS(ON) = 220 m @ VGS = -1.8 V This complementary P-Channel MOSFET with SyncFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for providing an extremely low RDS(ON) in a small package. Applications DC/DC converter Power management * Fast switching speed. * High performance trench technology for extremely low RDS(ON) S1 D1 D2 Q2(P) D1,2 S1 D1,2 4 5 6 Q1(N) 3 2 1 G2 S2 G1 G2 SuperSOT Pin 1 TM -6 G1 S2 SuperSOTTM-6 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG TA=25oC unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current- Continuous - Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1a) Ratings Q1 (N) 30 16 2.4 7 1.3 0.7 -55 to +150 Q2 (P) -12 8 -2.5 -7 Units V V A W C Operating and Storage Junction Temperature Range Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1b) (Note 1) 100 175 60 C/W Package Marking and Ordering Information Device Marking .432 Device FDC6432SH Reel Size 7'' Tape width 8mm Quantity 3000 units 2003 Fairchild Semiconductor Corp. FDC6432SH Rev B (W) Electrical Characteristics T Symbol Parameter Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage FDC6432SH A = 25C unless otherwise noted Test Conditions Q Min Typ Max Units VGS = 0 V, VGS = 0 V, ID = 1 mA ID = -250 A Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 30 -12 25 -10 500 1 100 100 V mV/C A nA ID = 1 mA, Ref to 25C ID = -250 A, Ref to 25C VDS = 24 V, VDS = -10 V, VGS = 16 V, VGS = 8 V, VGS = 0 V VGS = 0 V VDS = 0 V VDS = 0 V On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Static Drain-Source On-Resistance Forward Transconductance Gate Resistance VDS = VGS, VDS = VGS, ID = 1 mA ID = -250 A Q1 Q2 Q1 Q2 Q1 1 -0.4 1.5 -0.7 -7 3 75 85 100 75 97 154 86 7 7 5 13 270 514 50 234 20 167 5 13 8 12 18 22 1.2 29 2.5 5.7 0.7 1.2 0.6 1.7 10 23 16 22 32 35 2.4 46 3.5 8 90 105 140 90 125 220 120 3 -1.5 V mV/C m ID = 1 mA, Ref to 25C ID = -250 A, Ref to 25C ID = 2.4A VGS = 10V, VGS = 4.5V, ID = 2.2A VGS=10V,ID=2.4A,TJ=125C VGS = -4.5V, ID = -2.5A VGS = -2.5V, ID = -2.0A VGS = -1.8V, ID = -1.6A VGS=-4.5V,ID=2.5A,TJ=125C VDS = 10 V, ID = 1 mA ID = -2.5A VDS = -5 V VGS = 15 mV, f = 1.0 MHz RDS(on) Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 m gFS RG S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance For Q1: VDS=15V, VGS=0V, f=1MHz For Q2: VDS= -6V, VGS=0V, f=1MHz pF pF pF Switching Characteristics (Note 2) td(on) tr td(off) tf Qg Qgs Qgd Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge For Q1: VDS = 15 V, ID= 2.4 A, VGS = 5 V For Q2: VDS = -10 V, ID= -2.5 A, VGS = -4.5 V For Q1: VDS = 15 V, ID= 1 A, VGS = 10 V, RGEN = 6 For Q2: VDS = -10 V, ID= -1 A, VGS = -4.5 V, RGEN = 6 ns ns ns ns nC nC nC FDC6432SH Rev B (W) FDC6432SH Electrical Characteristics T Symbol Parameter A = 25C unless otherwise noted Test Conditions VGS = 0 V, IS = 0.7A, Note 2 VGS = 0 V, IS = -0.8A, Note 2 For Q1: IF = 2.4A, dIF/dt = 300A/s For Q2: IF = -2.5A, dIF/dt = 100A/s Q Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Min Typ 0.6 -0.7 10 24 0.8 -0.5 4 6 Max 700 1200 Units mV ns A nC Drain-Source Diode Characteristics VSD tRR IRM QRR Drain-Source Diode Forward Voltage Reverse Recovery Time Maximum Reverse Recovery Current Reverse Recovery Charge Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 100C/W when mounted on a 1in2 pad of 2 oz copper b) 175C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDC6432SH Rev B (W) FDC6432SH Typical Characteristics : Q1 8 VGS = 10V 6.0V ID, DRAIN CURRENT (A) 6 3.5V 4.5V 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3.0V VGS = 3.0V 1.6 1.4 3.5V 1.2 4.0V 4.5V 5.0V 4 2.5V 2 6.0V 10V 1 0 0 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 0.8 0 2 4 ID, DRAIN CURRENT (A) 6 8 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.3 RDS(ON), ON-RESISTANCE (OHM) 1.7 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) ID = 2.4A VGS = 10V ID = 1.2A 0.25 0.2 TA = 125oC 0.15 0.1 TA = 25oC 0.05 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 7 6 ID, DRAIN CURRENT (A) 5 4 3 2 1 0 1 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 1 IS, REVERSE DRAIN CURRENT (A) VDS = 5V TA = -55oC 25oC VGS = 0V 125oC 0.1 TA = 125oC 25oC 0.01 -55oC 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC6432SH Rev B (W) FDC6432SH Typical Characteristics : Q1 10 VGS, GATE-SOURCE VOLTAGE (V) 400 ID = 2.4A VDS = 10V 15V CAPACITANCE (pF) 300 Ciss f = 1 MHz VGS = 0 V 8 20V 6 200 Coss 100 Crss 0 4 2 0 0 1 2 3 4 5 Qg, GATE CHARGE (nC) 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 10 Figure 8. Capacitance Characteristics. ID, DRAIN CURRENT (A) 8 10 SINGLE PULSE RJA = 175C/W TA = 25C RDS(ON) LIMIT 1 10s 0.1 VGS = 10V SINGLE PULSE RJA = 175oC/W TA = 25oC 0.01 0.1 1 DC 100s 1ms 10ms 100ms 1s 6 4 2 10 100 0 0.01 0.1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RJA(t) = r(t) * RJA RJA = 175 C/W P(pk) t1 t2 SINGLE PULSE o 0.2 0.1 0.1 0.05 0.02 0.01 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.01 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDC6432SH Rev B (W) FDC6432SH Typical Characteristics : Q2 8 7 -ID, DRAIN CURRENT (A) 6 VGS = -4.5V -3.5V 2.8 -2.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 -3.0V -2.0V VGS=-1.8V 5 4 3 2 1 0 0 0.5 1 1.5 2 2.5 -VDS, DRAIN TO SOURCE VOLTAGE (V) -1.8V -2.0V -2.5V -3.0V -3.5V -4.5V -1.5V 1 2 3 4 5 6 7 8 -ID, DRAIN CURRENT (A) Figure 12. On-Region Characteristics. Figure 13. On-Resistance Variation with Drain Current and Gate Voltage. 0.29 RDS(ON), ON-RESISTANCE (OHM) 1.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.3 1.2 1.1 1 0.9 0.8 -50 ID = -2.5A VGS = -4.5V ID = -1.3A 0.25 0.21 0.17 0.13 TA = 125oC TA = 25oC 0.09 0.05 -25 0 25 50 75 100 125 150 1 2 3 4 5 TJ, JUNCTION TEMPERATURE (oC) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 14. On-Resistance Variation with Temperature. 8 Figure 15. On-Resistance Variation with Gate-to-Source Voltage. 10 -IS, REVERSE DRAIN CURRENT (A) VGS = 0V TA = 125oC VDS = -5V 7 -ID, DRAIN CURRENT (A) 6 5 4 3 2 1 0 0.5 1 1.5 2 25oC TA = -55oC 125oC 1 0.1 25oC -55oC 0.01 0.001 2.5 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 16. Transfer Characteristics. Figure 17. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC6432SH Rev B (W) FDC6432SH Typical Characteristics : Q2 5 -VGS, GATE-SOURCE VOLTAGE (V) 800 ID = -2.5A 4 VDS = -4V -8V -6V CAPACITANCE (pF) 700 CISS 600 500 400 COSS 300 200 100 CRSS f = 1 MHz VGS = 0 V 3 2 1 0 0 1 2 3 4 5 6 7 Qg, GATE CHARGE (nC) 0 0 3 6 9 12 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 18. Gate Charge Characteristics. 10 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT -ID, DRAIN CURRENT (A) 1ms 10ms 100ms 1s 100s 10 Figure 19. Capacitance Characteristics. 8 SINGLE PULSE RJA = 175C/W TA = 25C 1 10s DC 6 0.1 VGS = -4.5V SINGLE PULSE RJA = 175oC/W TA = 25oC 4 2 0.01 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) 0 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 20. Maximum Safe Operating Area. Figure 21. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RJA(t) = r(t) * RJA RJA = 175 C/W o 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.01 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 22. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDC6432SH Rev B (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx FACT ActiveArray FACT Quiet Series Bottomless FASTa CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. The Power Franchise Programmable Active Droop DISCLAIMER ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrencha MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERa OPTOLOGICa SMART START OPTOPLANAR SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogica TruTranslation UHC UltraFETa VCX FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I2 |
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